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 HCF4517B
DUAL 64 STAGE STATIC SHIFT REGISTER
s
s
s s
s
s s
s s
CLOCK FREQUENCY 12MHz (Typ.) at VDD = 10V SCHMITT TRIGGER CLOCK INPUTS ALLOWS OPERATION WITH VERY SLOW CLOCK RISE AND FALL TIMES THREE STATE OUTPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED, SYMMETRICAL OUTPUT CHARACTERISTCS 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DIP
ORDER CODES
PACKAGE DIP SOP TUBE HCF4517BEY HCF4517BM1 T&R HCF4517M013TR
DESCRIPTION HCF4517B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP package. This device is a dual 64-stage static shift register consisting of two independent registers each having a clock, data, and write enable input and outputs accessible by stages following the 16th,
32nd, 48th, and 64th stages. These stages also serve as input points allowing data to be put in at the 17th , 33rd, and 49th stages when the write enable input is a logic 1 and the clock goes through a low to high transition. The truth table indicates how the clock and write enable inputs control the operation of HCF4517B. Inputs at the intermediate stages allow entry of 64-bits into the register with 16 clock pulses. The 3-state outputs permit connection of this device to an external bus.
PIN CONNECTION
September 2002
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HCF4517B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No 1, 2, 5, 6 10, 11,14, 15 3, 13 7, 9 4, 12 8 16 SYMBOL NAME AND FUNCTION
QnA IN/OUT Stage QnB IN/OUT Stage WEA, WEB Write Enable DA, DB Data Input CLA, CLB Clock VSS Negative Supply Voltage VDD Positive Supply Voltage
FUNCTIONAL DIAGRAM (One Half)
TRUTH TABLES
CLOCK L L H H WRITE ENABLE L H L H L H L H
X : Don't Care
DATA X X X X DI In DI In X X
STAGE 16 TAP STAGE 32 TAP STAGE 48 TAP STAGE 64 TAP Q16 Z Q16 Z Q16 D17 In Q16 Z Q32 Z Q32 Z Q32 D33 In Q32 Z Q48 Z Q48 Z Q48 D49 In Q48 Z Q64 Z Q64 Z Q64 Z Q64 Z
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HCF4517B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDD VI II PD Top Tstg Supply Voltage DC Input Voltage DC Input Current Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Storage Temperature Parameter Value -0.5 to +22 -0.5 to VDD + 0.5 10 200 100 -55 to +125 -65 to +150 Unit V V mA mW mW C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 20 0 to VDD -55 to 125 Unit V V C
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HCF4517B
DC SPECIFICATIONS
Test Condition Symbol Parameter VI (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 0.4 0.5 1.5 VO (V) |IO| VDD (A) (V) 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 5 10 15 18 18 TA = 25C Min. Typ. 0.04 0.04 0.04 0.08 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -1.36 -0.44 -1.1 -3.0 1.74 4.42 11.56 0.44 1.1 3.0 -3.2 -1 -2.6 -6.8 4 10.4 27.2 1 2.6 6.8 10-5 10-4 5 -1.1 -0.36 -0.9 -2.4 1.43 3.74 9.52 0.36 0.9 2.4 3.5 7 11 1.5 3 4 -1.1 -0.36 -0.9 -2.4 1.43 3.74 9.52 0.36 0.9 2.4 Max. 5 10 20 100 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 Value -40 to 85C Min. Max. 150 300 600 3000 4.95 9.95 14.95 0.05 0.05 0.05 -55 to 125C Min. Max. 150 300 600 3000 Unit
IL
Quiescent Current
A
VOH
High Level Output Voltage Low Level Output Voltage High Level Input Voltage Low Level Input Voltage Output Drive Current
VOL
VIH
VIL
IOH
IOL
Output Sink Current Q Output Sink Current Input Leakage Current 3-State Output Leakage Current Input Capacitance
IOL
0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/5 0/10 0/15 0/18 0/18
<1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1
V
V
V
V
mA
mA
mA
II
Any Input Any Input Any Input
0.1 0.4
7.5
1 12
1 12
A A
pF
IOZ CI
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
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HCF4517B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Test Condition Symbol Parameter VDD (V) 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 Min. Value (*) Typ. 200 110 90 75 40 30 100 50 40 -50 -25 -15 -50 -30 -15 50 25 20 100 50 25 90 40 25 6 12 15 Unlimited Max. 400 220 180 150 80 60 200 100 80 ns Unit
tPHL tPLH Propagation Delay Time : CL to Bit 16 Tap tPLZ tPHZ 3-State Output WE to Bit tPZL tPZH 16 Tap (see note) tTHL tTLH Output Transition Time
ns
ns
tsetup
Setup Time (WRITE ENABLE to CLOCK) Setup Time (DATA to CLOCK) Release Time (WRITE ENABLE to CLOCK)
tsetup
-100 -50 -30 -100 -60 -30
ns
ns 100 50 40 200 100 50 180 80 50
ns
thold
Hold Time (DATA to CLOCK) Minimum Clock Pulse Width Maximum Clock Input Frequency Maximum Clock Input Rise or Fall Time
ns
tW
ns
fCL
3 6 8
MHz
tr tf
s
(*) Typical temperature coefficient for all VDD value is 0.3 %/C. NOTE : Measured at the point of 10% change in output load of 50pF, RL = 1K to VDD for tPZL, tPLZ and RL = 1K to VSS for tPHZ
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HCF4517B
TEST CIRCUIT
TEST tPLH, tPHL tPZL, tPLZ tPZH, tPHZ
CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200K RT = ZOUT of pulse generator (typically 50)
SWITCH Open VDD VSS
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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HCF4517B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 TYP. MAX. inch
P001C
7/8
HCF4517B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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